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SLA5081
Absolute maximum ratings
Symbol VDSS VGSS ID ID (pulse)*1 EAS*2 PT FET 1 150 7 15 100
N-channel General purpose
External dimensions A
(Ta=25C)
***
SLA (15-pin)
Ratings FET 2 +20, -10
Unit V V A A mJ W W C/W C/W Vrms C C
5 (Ta=25C, with all circuits operating, without heatsink) 47 (Tc=25C, with all circuits operating, with infinite heatsink)
j-a j-c
VISO Tch Tstg
25 (Junction-Air, Ta=25C, with all circuits operating) 2.66 (Junction-Case, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150
*1 : PW100s, duty1% *2 : VDD=25V, L=3.4mH, ID=7A, unclamped, RG=50, see Fig. E on page 15.
sEquivalent circuit diagram
3 FET1 2 FET2 7 8 10 FET2 9 12 FET2 11 14 FET2 13
1
15
Pins 4, 5, 6 : NC
Characteristic curves
ID-VDS Characteristics (Typical)
FET 1
7
10V
3.0V 2.6V
ID-VGS Characteristics (Typical)
FET 2 FET 1
7
7
10V 4V
6 5
6 5
6
2.8V
5
ID (A)
ID (A)
4 3 2
2.4V
4 3
2.6V
ID (A)
4 3 2
2
2.2V
2.4V
1
VGS=2.0V
0
0
2
4
6
8
10
0 0 2 4 6 8 10
0
0
1
2
-40
VGS=2.2V
C
1
1
TC=1 25C 25C
3
4
VDS (V)
VDS (V)
VGS (V)
RDS(ON)-ID Characteristics (Typical)
FET 1
100
200
4V
FET 2
7 6
FET 2
(VDS=10V)
90
(ON) (m)
VGS=10V
4V
150
(ON) (m)
5
ID (A)
80
VGS=10V
4 3 2
125 C 25 C
100
RDS
70
RDS
50
50
0
1
2
3
4
5
6
7
0 0
1
2
3
4
5
6
7
0 0 1 2 3 4
ID (A)
ID (A)
VGS (V)
RDS(ON)-TC Characteristics (Typical)
200
FET 1
(ID=3.5A)
500
FET 2
(ID=3.5A)
400
(ON) (m)
(ON) (m)
4V
S=
100
V 10
300
4V
VG
VG
S=
V 10
RDS
RDS
200
100
0 -40
0
50
100
150
0 -40
0
50
100
150
TC (C)
TC (C)
102
Tc=
1
-40C
60
SLA5081
Electrical characteristics
FET 1 Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr 1.0 7 12 80 85 1600 380 90 35 70 125 90 1.0 320 1.5 105 115 150 100 100 2.0 Specification typ max Unit V nA Conditions ID=100A, VGS=0V VGS=20V, -10V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V, f=1.0MHz, VGS=0V ID=3.5A, VDD 70V, RL=20, VGS=5V, see Fig.3 on page 16. ISD=7A, VGS=0V IF=100mA 1.0 4 9 150 170 870 320 210 25 55 80 50 1.0 500 1.5 200 230 Specification min 150 100 100 2.0 typ max FET 2 Unit V nA Conditions ID=100A, VGS=0V VGS=20V, -10V VDS=150V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=3.5A VGS=10V, ID=3.5A VGS=4V, ID=3.5A VDS=10V f=1.0MHz VGS=0V ID=3.5A VDD 70V RL=20 VGS=5V, see Fig.3 on page 16. ISD=7A, VGS=0V IF=100mA
(Ta=25C)
A
V S m m pF pF pF ns ns ns ns V ns
A
V S m m pF pF pF ns ns ns ns V ns
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
FET 1
100
Safe Operating Area (SOA)
FET 2 FET 1
(VDS=10V)
20 10
ID (pulse) MAX
(VDS=10V)
20
(TC=25C)
10 0 s 10 m s( 1s ho t) 1m s
10
Re (yfs) (S)
10
T
- C=
Re (yfs) (S)
40
C
C 25 C 125
5
=- TC
C 40
5
C 5
RDS (on) LIMITED
12
1
25C
ID (A)
0.5
1
1
0.1 0.05
1-Circuit Operation
0.5
0.1 0.05 0.1 1 7
ID (A)
0.3 0.05
0.1
0.5
1
5
7
0.01 0.5
1
5
10
50
100
200
ID (A)
VDS (V)
Capacitance-VDS Characteristics (Typical)
FET 1
10000
VGS=0V f=1MHz
FET 2
5000
VGS=0V f=1MHz
FET 2
20 10 5
ID (pulse) MAX
(TC=25C)
10 1m 10 m s( 1s s 0 s
Capacitance (pF)
Capacitance (pF)
RDS (on) LIMITED
Ciss
1000
ho
t)
1000
500
ID (A)
Ciss
0.5
Coss Crss
0.1
1-Circuit Operation
100 50 40
Coss Crss
0.05
100 50
0.01 0.5
0
10
20
30
40
50
0
10
20
30
40
50
1
5
10
50
100
200
VDS (V)
VDS (V)
VDS (V)
IDR-VSD Characteristics (Typical)
7
PT-Ta Characteristics
FET 2
50
FET 1
7 6
All Circuits Operating
6 5
10V
40
5
IDR (A)
IDR (A)
10
V
VGS=0V
PT (W)
4 3 2 1
4V
4
4V
30
ith W In ite fin
3 2 1
20
VGS=0V
He s at k in
10
Without Heatsink
0 0 0.5 1.0 1.5
0 0 0.5 1.0 1.5
0 0 50 100 150
VSD (V)
VSD (V)
Ta (C)
103

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